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page 1 features ? optimized for cw, pulsed, wimax, w-cdma, lte and other applications from 2100 C 2700mhz ? 125w p 3db peak envelope power ? 90w p 3db cw power ? 10w linear power @ 2.0% evm for single carrier ofdm, 10.3db peak/avg, 10mhz channel band - width, 16.5db gain, 26% effciency ? characterized for operation up to 32v ? 100% rf tested ? thermally enhanced industry standard package ? high reliability gold metallization process ? lead-free and rohs compliant ? subject to eccn 3a982.a.1 export control 2100 C 2700 mhz 125 watt, 28 volt gan hemt rf specifcations (cw): v ds = 28v, i dq = 600ma, frequency = 2500mhz, t c = 25c, measured in nitronex test fixture gallium nitride 28v, 125w rf power transistor built using the sigantic ? nrf1 process - a proprietary gan-on-silicon technology typical 2-tone performance: v ds = 28v, i dq = 600ma, frequency = 2500mhz, tone spacing = 1mhz, t c = 25c measured in load pull system (refer to table 1 and figure 1) symbol parameter typ units p 3db,pep peak envelope power at 3db compression 125 w p 1db,pep peak envelope power at 1db compression 90 w p imd3 peak envelope power at -35dbm imd3 80 w typical ofdm performance: v ds = 28v, i dq = 600ma, single carrier ofdm waveform 64-qam 3/4, 8 burst, continuous frame data, 10mhz channel bandwidth. peak/avg = 10.3db @ 0.01% probability on ccdf. frequency = 2500 to 2700mhz. p out,avg = 10w, t c =25c. symbol parameter typ units g p power gain 16.5 db h drain effciency 26 % evm error vector magnitude 2.0 % symbol parameter min typ max units p 3db average output power at 3db gain compression 80 90 - w g ss small signal gain 14 16.5 - db h drain effciency at 3db gain compression 55 62 - % nds-001 rev 6, april 2013 NPT25100 NPT25100
page 2 absolute maximum ratings: not simultaneous, t c = 25c unless otherwise noted symbol parameter min typ max units off characteristics v bds drain-source breakdown voltage (v gs = -8v, i d = 36ma) 100 - - v i dlk drain-source leakage current (v gs = -8v, v ds = 60v) - 9 18 ma on characteristics v t gate threshold voltage (v ds = 28v, i d = 36ma) -2.3 -1.8 -1.3 v v gsq gate quiescent voltage (v ds = 28v, i d = 600ma) -2.0 -1.5 -1.0 v r on on resistance (v gs = 2v, i d = 270ma) - 0.13 0.14 w i d,max drain current (v ds = 7v pulsed, 300 m s pulse width, 0.2% duty cycle) 19.0 20.5 - a symbol parameter max units v ds drain-source voltage 100 v v gs gate-source voltage -10 to 3 v i g gate current 180 ma p t total device power dissipation (derated above 25c) 100 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 c hbm human body model esd rating (per jesd22-a114) 2 (>2000v) mm machine model esd rating (per jesd22-a115) m2 (>100v) dc specifcations: t c = 25c symbol parameter min typ max units off characteristics v bds drain-source breakdown voltage (v gs = -8v, i d = 36ma) 100 - - v i dlk drain-source leakage current (v gs = -8v, v ds = 60v) - 9 18 ma on characteristics v t gate threshold voltage (v ds = 28v, i d = 36ma) -2.3 -1.8 -1.3 v v gsq gate quiescent voltage (v ds = 28v, i d = 700ma) -2.0 -1.5 -1.0 v r on on resistance (v gs = 2v, i d = 270ma) - 0.13 0.14 w i d,max drain current (v ds = 7v pulsed, 300 m s pulse width, 0.2% duty cycle) - 21.0 - a symbol parameter min typ max units q jc thermal resistance (junction-to-case), t j = 145 c - 1.75 - c/w thermal resistance specifcation nds-001 rev 6, april 2013 NPT25100 NPT25100
page 3 z s is the source impedance presented to the device. z l is the load impedance presented to the device. table 1: optimum source and load impedances for cw gain, drain effciency, and output power performance, v ds = 28v, i dq = 600ma frequency (mhz) z s (w) z l (w) 2140 12.1 - j20.0 2.6 - j2.6 2300 10.0 - j3.0 2.5 - j2.3 2400 9.5 - j3.0 2.5 - j2.5 2500 9.0 - j3.0 2.5 - j2.7 2600 8.5 - j3.0 2.5 - j3.1 2700 8.0 - j3.0 2.5 - j3.3 figure 1 - optimal impedances for cw performance, v ds = 28v, i dq = 600ma nds-001 rev 6, april 2013 NPT25100 NPT25100
page 4 figure 5 - typical cw and pep performance in load-pull system, v ds = 28v, i dq = 600ma, frequency = 2500mhz, tone spacing = 1mhz figure 2 - typical cw performance in load-pull system, v ds = 28v, i dq = 600ma, frequency = 2300 to 2700mhz figure 3 - typical cw performance in load-pull system, v ds = 28v & 32v, i dq = 600ma, frequency = 2500mhz , impedances held constant figure 4 - typical cw performance in load pull system, v ds = 28v, i dq = 600ma nds-001 rev 6, april 2013 NPT25100 NPT25100
page 5 figure 6 - typical imd3 performance in load-pull system, v ds = 28v, i dq = 600ma, frequency = 2500mhz, tone spacing = 1mhz figure 7 - typical cw, pep, and pulsed performance in load-pull system, pulse width = 10 m s, duty cycle = 1%, v ds = 28v, i dq = 600ma, frequency = 2500mhz, tone spacing = 1mhz figure 8 - typical pulsed cw performance in load-pull system, 1% duty cycle, v ds = 28v, i dq = 600ma, frequency = 2500mhz figure 9 - typical ofdm performance in load-pull system, v ds = 28v & 32v, i dq = 600ma, frequency = 2500mhz nds-001 rev 6, april 2013 NPT25100 NPT25100
page 6 figure 10 - typical ofdm performance in load-pull system, p out, avg = 10w, v ds = 28v, i dq = 600ma figure 13 - typical w-cdma performance in load-pull system, v ds = 28v, i dq = 600ma, frequency = 2110 to 2170mhz figure 11 - typical lte (long term evolution, 20mhz channel), nitronex test fixture, v ds = 28v, i dq = 600ma, frequency = 2600mhz figure 12 - ofdm performance in nitronex test fixture as a function of i dq , v ds = 28v, i dq = 500 to 1000ma, frequency = 2500mhz nds-001 rev 6, april 2013 NPT25100 NPT25100
page 7 figure 14 - ofdm performance in nitronex test fixture as a function of i dq , v ds = 28v, i dq = 500ma to 1000ma, frequency = 2500mhz figure 15 - ofdm performance in nitronex test fixture as a function of case temperature, v ds = 28v, i dq = 600ma, frequency = 2500mhz figure 16 - s-parameters measured in nitronex test fixture, v ds = 28v, i dq = 600ma figure 17 - quiescient gate voltage (v gsq ) required to reach i dq as a function of case temperature, measured in nitronex test fixture at v ds = 28v nds-001 rev 6, april 2013 NPT25100 NPT25100
page 8 figure 18 - power derating curve figure 19 - mttf of nrf1 devices as a function of junction temperature nds-001 rev 6, april 2013 NPT25100 NPT25100
page 9 figure 20 - app-NPT25100-25 2500mhz demonstration board v gs v in v out v ds c9 c10 c5 c6 c7 c 8 r1 r2 pa1 c11 c 1 2 c13 c1 4 c 15 c 16 c4 c3 c2 c1 nitronex corporation nbd-019_rev2 rf in rf out v gs v ds nds-001 rev 6, april 2013 NPT25100 NPT25100
page 10 figure 21 - app-NPT25100-25 2500mhz demonstration board equivalent circuit name value tolerance vendor vendor number c1 3.3pf +/- 0.1pf atc atc600f3r3b c2 1.2pf +/- 0.1pf atc atc100b1r 2bt c3 1uf 20% panasonic ecj-5yb2a105m c4 0.1uf 10% kemet c1206c104k1ractu c5 0.01uf 10% avx 12061c103k at2a c6 1uf 10% panasonic ecj-5yb2a105m c7 0.1uf 10% kemet c1206c104k1ractu c8 0.01uf 10% avx 12061c103k at2a c9 150uf 20% nichicon upw1c151med c10 270uf 20% united chmi-con elxy630ell271mk25s c11 33pf 5% atc atc600f330b c12 33pf 5% atc atc600f330b c13 0.9pf +/- 0.1pf atc atc600f0r9b c14 1.8pf +/- 0.1pf atc atc600f1r8b c15 do not place c16 0.8pf +/- 0.1pf atc atc600f0r8b pa1 -- -- -- NPT25100b r1 10 ohm 1% panasonic erj- 6enf10r0v r2 0.033 ohm 1% panasonic erj-6rqfr33v nbd-019_rev2 -- -- alberta printed circuits nbd-019_rev2 substrate rogers r04350, t = 30mil e r = 3.5 table 2: app-NPT25100-25 2500mhz demonstration board bill of materials v gs rf in rf out v ds 1 sch-019 app-NPT25100-25 schematic r. sadler 10/6/2007 10/6/2007 b size: r. sadler na scale: nitronex corporation 1 1 rev: drawn: dated: dated: checked: c ompany: title: drawing no: sheet: of revision record approved: eco no: a b d date: 1 2 3 4 5 6 d c a b c ltr n itron ex c o r p o r a t i o n c1 3. 3pf 0805 r1 10 0805 c4 0. 1uf 1206 c3 1uf 1812 c2 1. 0pf 0805 tl1 207mils 610mils tl5 580mils 410mils c6 1uf 1812 c7 0. 1uf 1206 c5 0. 01uf 1206 c8 0. 01uf 1206 c13 0. 9pf 0805 c15 . 8pf 0805 tl6 200mils 65mils tl7 300mils 65mils tl2 168mils 65mils c12 12pf 0805 s d g pa1 NPT25100 + c9 150uf + c10 270uf r2 0. 33 0805 c11 12pf 0805 c16 1. 0pf 0805 c14 1. 8pf 0805 vgs vds rfin rfout nds-001 rev 6, april 2013 NPT25100 NPT25100
page 11 figure 22 - ac780b-2 metal-ceramic package dimensions and pinout (all dimensions are in inches [mm]) ordering information 1 part number description NPT25100b NPT25100 in ac780b-2 metal-ceramic bolt-down package NPT25100p NPT25100 in ac780p-2 metal-ceramic pill package 1: to fnd a nitronex contact in your area, visit our website at http://www.nitronex.com nds-001 rev 6, april 2013 NPT25100 NPT25100
page 12 figure 23 - ac780p-2 metal-ceramic package dimensions and pinout (all dimensions are in inches [mm]) nds-001 rev 6, april 2013 NPT25100 NPT25100
page 13 nitronex, llc 2305 presidential drive durham, nc 27703 usa +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com additional information this part is lead-free and is compliant with the rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). important notice nitronex, llc reserves the right to make corrections, modifcations, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to nitronex terms and conditions of sale supplied at the time of order acknowledgment. the latest information from nitronex can be found either by calling nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. nitronex warrants performance of its packaged semiconductor or die to the specifcations applicable at the time of sale in accordance with nitronex standard warranty. testing and other quality control techniques are used to the extent nitronex deems necessary to support the warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. nitronex assumes no liability for applications assistance or customer product design. customers are responsible for their product and applications using nitronex semiconductor products or services. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. nitronex does not warrant or represent that any license, either express or implied, is granted under any nitronex patent right, copyright, mask work right, or other nitronex intellectual property right relating to any combination, machine or process in which nitronex products or services are used. reproduction of information in nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. any alteration of the contained information invalidates all warranties and nitronex is not responsible or liable for any such statements. nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. should buyer purchase or use nitronex, llc products for any such unintended or unauthorized application, buyer shall indemnify and hold nitronex, llc, its of f cers, employees, subsidiaries, affliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that nitronex was negligent regarding the design or manufacture of said products. nitronex and the nitronex logo are registered trademarks of nitronex, llc. all other product or service names are the property of their respective owners. ? nitronex, llc 2012. all rights reserved. nds-001 rev 6, april 2013 NPT25100 NPT25100

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